High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

Articles you may be interested in Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Appl. High-performance organic thin-film transistors with metal oxide/metal bilayer electrode Appl. We report on fabrication of MoS 2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS 2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS 2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a " memory step, " was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS 2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS 2 thin-film transistors in extreme-temperature electronics and sensors. V C 2015 AIP Publishing LLC.